Self-aligned AlGaAs/GaAs HBT with InGaAs emitter cap layer

16 January 1987

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 23 (2) , 64-65
https://doi.org/10.1049/el:19870046

Abstract

A new self-aligned AlGaAs/GaAs HBT with an InGaAs emitter cap layer is presented. This HBT has nonalloyed ohmic contacts to the emitter and base that are formed simultaneously and in a self-aligned manner. The low emitter contact resistance of 1.4×10^-7 Ωcm² and the high transconductance per unit area of 3.3 mS/μm² demonstrate the effectiveness of this structure.

Keywords

ALGAAS-GAAS
HETEROJUNCTION BIPOLAR TRANSISTORS
CONTACT RESISTANCE
DC CHARACTERISTICS
TRANSCONDUCTANCE PER UNIT AREA
SELF-ALIGNED ALGAAS/GAAS HBT
NONALLOYED OHMIC CONTACTS
INGAAS EMITTER CAP LAYER

This publication has 1 reference indexed in Scilit:

Application of Heterojunction Bipolar Transistors to High Speed, Small-Scale Digital Integrated Circuits
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1984