Ultra-high speed AlGaAs/GaAs heterojunction bipolar transistors
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The characteristic device performance of AlGaAs/GaAs ballistic collection transistors (BCTs) and applications of this device to integrated circuits are considered. The BCT structure reduces the collector transit times, which leads to an increase in cutoff frequency. Although near-ballistic collection only occurs in a relatively narrow collector voltage range, the cutoff frequency can be maximized at a desired collector voltage. This feature is useful when applying BCTs to logic gates. A propagation delay time of 1.9 ps/gate has been obtained in an ECL (emitter coupled logic) ring oscillator configured of BCTs. The maximum toggle frequency of a one-by-two frequency divider consisting of eight NOR-gates is as high as 20.2 GHz. These results demonstrate the high-speed potential of BCTs.Keywords
This publication has 5 references indexed in Scilit:
- A possible near-ballistic collection in an AlGaAs/GaAs HBT with a modified collector structureIEEE Transactions on Electron Devices, 1988
- Self-aligned AlGaAs/GaAs HBT with low emitter resistance utilizing InGaAs cap layerIEEE Transactions on Electron Devices, 1988
- 22 GHz 1/4 frequency divider using AlGaAs/GaAs HBTsElectronics Letters, 1987
- Electron velocity overshoot in the collector depletion layer of AlGaAs/GaAs HBT'sIEEE Electron Device Letters, 1986
- A proposed structure for collector transit-time reduction in AlGaAs/GaAs bipolar transistorsIEEE Electron Device Letters, 1986