Modeling buffer layer IGBTs for circuit simulation
- 1 March 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Electronics
- Vol. 10 (2) , 111-123
- https://doi.org/10.1109/63.372596
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Device Models, Circuit Simulation, And Computer-controlled Measurements For The IGBTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Simulating the dynamic electro-thermal behavior of power electronic circuits and systemsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A dynamic electro-thermal model for the IGBTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- An experimentally verified IGBT model implemented in the Saber circuit simulatorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Insulated gate bipolar transistor (IGBT) modeling using IG-SPICEPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A dynamic electro-thermal model for the IGBTIEEE Transactions on Industry Applications, 1994
- Thermal component models for electrothermal network simulationIEEE Transactions on Components, Packaging, and Manufacturing Technology: Part A, 1994
- Analytical modeling of device-circuit interactions for the power insulated gate bipolar transistor (IGBT)IEEE Transactions on Industry Applications, 1990
- A Performance Trade-Off for the Insulated Gate Bipolar Transistor: Buffer Layer Versus Base Lifetime ReductionIEEE Transactions on Power Electronics, 1987
- Analysis and Simulation of Semiconductor DevicesPublished by Springer Nature ,1984