Influence of the surface electric field on carrier transfer into InGaAs/GaAs single quantum wells
- 1 June 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (6) , 818-821
- https://doi.org/10.1088/0268-1242/7/6/014
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Dynamics of carrier capture in an InGaAs/GaAs quantum well trapApplied Physics Letters, 1989
- Trapping of carriers in single quantum wells with different configurations of the confinement layersPhysical Review B, 1988
- Perpendicular transport of optically generated carriers in GaAs/AlGaAs quantum well structuresPhysica Scripta, 1988
- Capture of electrons and holes in quantum wellsApplied Physics Letters, 1988
- Resonance effect in inter-sub-band transitions of single quantum wellsSemiconductor Science and Technology, 1987
- Optical time-of-flight measurement of carrier diffusion and trapping in an InGaAs/InP heterostructureApplied Physics Letters, 1987
- Resonant carrier capture by semiconductor quantum wellsPhysical Review B, 1986
- Injection, intersubband relaxation and recombination in GaAs multiple quantum wellsJournal of Luminescence, 1985
- Transient Characteristics of Photoluminescence from GaAs/Ga0.7Al0.3As Single Quantum Well StructureJapanese Journal of Applied Physics, 1985
- Recombination Enhancement due to Carrier Localization in Quantum Well StructuresPhysical Review Letters, 1983