Transient Characteristics of Photoluminescence from GaAs/Ga0.7Al0.3As Single Quantum Well Structure
- 1 January 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (1A) , L53
- https://doi.org/10.1143/jjap.24.l53
Abstract
Transient characteristics of luminescence from single quantum well (SQW) structure have been examined using a time-correlated single photon counting method. The decay time of the SQW luminescence is shorter than that of bulk sample. The rapid decay is considered to reflect the enhancement of recombination due to localization of excitons. The disagreement between the present results and those reported by other researchers is discussed.Keywords
This publication has 8 references indexed in Scilit:
- Picosecond time-resolved study of excitons in GaAs-A1As multi-quantum-well structuresPhysical Review B, 1984
- Localization induced electron-hole transition rate enhancement in GaAs quantum wellsApplied Physics Letters, 1984
- Recombination Enhancement due to Carrier Localization in Quantum Well StructuresPhysical Review Letters, 1983
- Subnanosecond fluorescence-lifetime measuring system using single photon counting method with mode-locked laser excitationReview of Scientific Instruments, 1981
- Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structuresSolid State Communications, 1981
- Luminescence studies of optically pumped quantum wells in GaAs-multilayer structuresPhysical Review B, 1980
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- Spin relaxation of conduction electrons inPhysical Review B, 1975