Simplified method to calculate the band bending and the subband energies in MOS capacitors
- 1 January 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 44 (9) , 1539-1543
- https://doi.org/10.1109/16.622612
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Semiconductor Device ModellingPublished by Springer Nature ,1989
- Self-consistent calculation of electron and hole inversion charges at silicon–silicon dioxide interfacesJournal of Applied Physics, 1986
- Analysis and Simulation of Semiconductor DevicesPublished by Springer Nature ,1984
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- An introduction to silicon inversion layersContemporary Physics, 1977
- Quantum properties of surface space-charge layersC R C Critical Reviews in Solid State Sciences, 1973
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967