Frequency-induced electron delocalisation and fractional quantisation in silicon inversion layers
- 20 June 1984
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 17 (17) , L433-L438
- https://doi.org/10.1088/0022-3719/17/17/004
Abstract
The authors demonstrate the disappearance of plateaux of quantised Hall resistance with increasing frequency resulting in a decrease in the extent of localisation. At the highest frequencies this is accompanied by the evolution of structure corresponding to fractional quantisation. This is discussed in terms of an increased role for the electron-electron interaction as the effects of disorder diminish.Keywords
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