Imref behaviour in metal - semiconductor barriers

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Abstract
An expression for the quasi-Fermi level ξ (x) in the barrier region of an ideal rectifying contact is derived for the diffusion approximation. Typically, ξ is found to be flat within 2k T over 99% of the barrier, in broad agreement with a recent publication by Rhoderick, thereafter falling steeply away towards ξ in the metal. It is argued that this flatness is similar, although not identical, to the predictions of the thermionic emission (or diode) theory; and that in both, the Imref gradient dξ/dx is so large in the neighbourhood of the interface as to be at variance with the notion of quasi-equilibrium. Some aspects of applying such a simple single Imref theory to a diode with surface states and an interfacial gap are also briefly discussed.

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