10 wavelength MQW-DBR lasers fabricated by selectiveMOVPEgrowth
- 12 May 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (10) , 785-786
- https://doi.org/10.1049/el:19940519
Abstract
Selective MOVPE growth is used to develop multiwavelength MQW-DBR lasers. Selectively grown waveguide layer thicknesses in the DBR region are varied by controlling the mask stripe width, resulting in wavelength control in MQW-DBR laser arrays fabricated with a constant period grating. A wavelength span of over 20 nm at a 2.5 nm constant wavelength step is demonstrated for 10 consecutive lasers.Keywords
This publication has 5 references indexed in Scilit:
- DBR laser array for WDM systemElectronics Letters, 1993
- Selective metalorganic vapor phase epitaxial growth of InGaAsP / InP layers with bandgap energy control in InGaAs / InGaAsP multiple-quantum well structuresJournal of Crystal Growth, 1993
- 1.5 μm compressive-strained multiquantum-well 20-wavelength distributed-feedback laser arraysElectronics Letters, 1992
- Distributed feedback laser arrays fabricated by synchrotron orbital radiation lithographyIEEE Journal on Selected Areas in Communications, 1990
- Single frequency and tunable laser diodesJournal of Lightwave Technology, 1988