Selective metalorganic vapor phase epitaxial growth of InGaAsP / InP layers with bandgap energy control in InGaAs / InGaAsP multiple-quantum well structures
- 1 September 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 132 (3-4) , 435-443
- https://doi.org/10.1016/0022-0248(93)90069-9
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
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