Composition of selectively grown InxGa1−xAs structures from locally resolved Raman spectroscopy
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 151-155
- https://doi.org/10.1016/0022-0248(91)90448-e
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Internal-stress effects on Raman spectra ofAs on InPPhysical Review B, 1988
- Planar selective growth of InP by MOVPEJournal of Crystal Growth, 1988
- MOVPE growth of SiO2-masked InP structures at reduced pressuresJournal of Crystal Growth, 1986
- MOCVD of InP and mass transport on structured InP substratesJournal of Crystal Growth, 1986