Planar selective growth of InP by MOVPE
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 248-253
- https://doi.org/10.1016/0022-0248(88)90535-0
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Selective Area Growth of High Quality GaAs by OMCVD Using Native Oxide MasksJournal of the Electrochemical Society, 1987
- A study of the orientation dependence of Ga(Al)As growth by MOVPEJournal of Crystal Growth, 1986
- Selective growth of GaAs in the MOMBE and MOCVD systemsJournal of Crystal Growth, 1986
- Selective growth of AlxGa1−xAs embedded in etched grooves on GaAs by low-pressure OMVPEJournal of Crystal Growth, 1986
- Selective Embedded Growth of AlxGa1-xAs by Low-Pressure Organometallic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1986
- Selective Epitaxial Growth of GaAs by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1985
- Selective epitaxial growth of GaAs by low-pressure MOVPEJournal of Crystal Growth, 1985
- Selective MOCVD growth of GaAlAs on partly masked substrates and its application to optoelectronic devicesJournal of Crystal Growth, 1984
- Selective metalorganic chemical vapour deposition for GaAs planar technologyJournal of Crystal Growth, 1984
- Selective MOCVD epitaxy for optoelectronic devicesJournal of Crystal Growth, 1981