Selective Epitaxial Growth of GaAs by Metalorganic Chemical Vapor Deposition
- 1 December 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (12R)
- https://doi.org/10.1143/jjap.24.1666
Abstract
Films of SiO2, W and W/SiO2 have been applied as masks for the selective epitaxial growth of GaAs by metalorganic chemical vapor deposition (MOCVD). The deposition selectiveties on SiO2 masks are mainly due to a difference in the absorption coefficients of reactant species between SiO2 and GaAs, while those on W masks are due to the surface migration of reactant species. Reactant species migrating on the surfaces of W masks are (finally) used in the epitaxial growth of opening windows, and selective epitaxial growth maintaining mask surfaces completely free from deposition have been attained for samples in which mask patterns are narrower than 40 µm.Keywords
This publication has 12 references indexed in Scilit:
- Growth of ultrapure and Si-doped InP by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1985
- Selective area growth of gallium arsenide by metalorganic vapor phase epitaxyApplied Physics Letters, 1984
- Selective metalorganic chemical vapour deposition for GaAs planar technologyJournal of Crystal Growth, 1984
- Structure of GaAs-Ga
1−
x
Al
x
As superlattices grown by metal-organic chemical vapour depositionElectronics Letters, 1983
- Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor depositionApplied Physics Letters, 1982
- Low threshold, high efficiency Ga1−xAlxAs single quantum well visible diode lasers grown by metalorganic chemical vapor depositionApplied Physics Letters, 1982
- Recollections and reflections of MO-CVDJournal of Crystal Growth, 1981
- Growth of high-purity GaAs epilayers by MOCVD and their applications to microwave MESFET'sJournal of Crystal Growth, 1981
- Selective MOCVD epitaxy for optoelectronic devicesJournal of Crystal Growth, 1981
- Temperature dependence of threshold current for quantum-well AlxGa1−xAs-GaAs heterostructure laser diodesApplied Physics Letters, 1980