Selective area growth of gallium arsenide by metalorganic vapor phase epitaxy
- 1 December 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (11) , 1229-1231
- https://doi.org/10.1063/1.95073
Abstract
Selective epitaxial growth of GaAs on (100) substrates partially covered with SiO2 was achieved by metalorganic vapor phase epitaxy. Under certain conditions of growth in a vertical reactor which were with a substrate temperature of 680° and As/Ga molar ratio of 12, epitaxial growth of GaAs took place in the areas not covered with SiO2; under those conditions there was no deposition on the areas covered with SiO2. As the substrate temperature was lowered, speckles of polycrystalline GaAs were formed on SiO2. At a temperature of 620 °C continuous polycrystalline GaAs was formed on SiO2 while epitaxial growth took place in the windows.Keywords
This publication has 1 reference indexed in Scilit:
- Selective MOCVD epitaxy for optoelectronic devicesJournal of Crystal Growth, 1981