Selective Embedded Growth of AlxGa1-xAs by Low-Pressure Organometallic Vapor Phase Epitaxy
- 1 January 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (1A) , L10
- https://doi.org/10.1143/jjap.25.l10
Abstract
Selective embedded growth of Al x Ga1-x As (x≤0.35) in grooves of patterned substrates has been achieved for the first time by low-pressure organometallic vapor phase epitaxy (LP-OMVPE). Epitaxial Al x Ga1-x As layers are embedded only in chemically etched grooves, while no polycrystalline deposition occurs on the masked area. The layers grown in grooves with the reverse-mesa cross sections, formed in the [110] direction, are uniform in thickness and show flat-smooth surfaces throughout. These results indicate that LP-OMVPE is a very promising technique for monolithic device integration.Keywords
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