Structural analysis and optical characterization of low GaAs waveguides fabricated by selective epitaxy
- 28 February 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 71 (1) , 141-148
- https://doi.org/10.1016/0022-0248(85)90054-5
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Low-loss GaInAsP buried-heterostructure optical waveguide branches and bendsApplied Physics Letters, 1984
- Low loss waveguides grown on GaAs using localized vapor phase epitaxyApplied Physics Letters, 1983
- Low-loss GaAs optical waveguides formed by lateral epitaxial growth over oxideApplied Physics Letters, 1981
- Optical striplines for integrated optical circuits in epitaxial GaAsApplied Physics Letters, 1974
- Channel Optical Waveguides and Directional Couplers in GaAs–Imbedded and RidgedApplied Optics, 1974
- Channel optical waveguide directional couplersApplied Physics Letters, 1973
- Vapor growth of epitaxial GaAs: A summary of parameters which influence the purity and morphology of epitaxial layersJournal of Crystal Growth, 1972
- Étude de l'anisotropie de la croissance épitaxiale de GaAs en phase vapeurJournal of Crystal Growth, 1972
- Étude de l'épitaxie localisée du GaAsJournal of Crystal Growth, 1972
- Some Theorems on the Free Energies of Crystal SurfacesPhysical Review B, 1951