Low loss waveguides grown on GaAs using localized vapor phase epitaxy
- 15 November 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (10) , 894-895
- https://doi.org/10.1063/1.94196
Abstract
New type of optical waveguides grown on GaAs by localized epitaxy using vapor phase epitaxy is presented. The guides are grown through a strip opened in a dielectric film and have a triangular cross section. The loss measurements have been performed on waveguides of lengths varying from 1 to 10 mm. Losses as low as 1.5 dB have been found. An original light coupling technique into the guide—through the substrate—has been used. Because of an improved optical confinement due to the structure of the guides and because of their low losses, these waveguides have numerous potential advantages and applications in integrated optics.Keywords
This publication has 6 references indexed in Scilit:
- Low-loss GaAs optical waveguides formed by lateral epitaxial growth over oxideApplied Physics Letters, 1981
- Low-loss high-purity GaAs waveguides for monolithic integrated optical circuits at GaAs laser wavelengthsApplied Physics Letters, 1976
- Optical striplines for integrated optical circuits in epitaxial GaAsApplied Physics Letters, 1974
- Channel Optical Waveguides and Directional Couplers in GaAs–Imbedded and RidgedApplied Optics, 1974
- Channel optical waveguide directional couplersApplied Physics Letters, 1973
- Étude de l'épitaxie localisée du GaAsJournal of Crystal Growth, 1972