Étude de l'anisotropie de la croissance épitaxiale de GaAs en phase vapeur
- 31 May 1972
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 13-14, 319-324
- https://doi.org/10.1016/0022-0248(72)90177-7
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Thermodynamic and Experimental Aspects of Gallium Arsenide Vapor GrowthJournal of the Electrochemical Society, 1970
- Influence of Substrate Temperature on GaAs Epitaxial Deposition RatesJournal of the Electrochemical Society, 1968
- The preparation of high purity gallium arsenide by vapour phase epitaxial growthSolid-State Electronics, 1965
- The Transport of Gallium Arsenide in the Vapor Phase by Chemical ReactionJournal of the Electrochemical Society, 1964