Selective area growth of GaAs and In0.53Ga0.47As epilayer structures by chemical beam epitaxy using silicon shadow masks: A demonstration of the beam nature
- 15 April 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (8) , 742-744
- https://doi.org/10.1063/1.95911
Abstract
Selective area growth of GaAs and In0.53Ga0.47As epilayer structure with well‐defined smooth edges has been achieved with a Si mask shadowing technique for chemical beam epitaxy (CBE). Epilayer stripes with widths as narrow as 2–5 μm have been replicated. An experiment was also conducted to unequivocally establish the beam nature of CBE and the absence of a stagnant gas boundary layer above the substrate surface during growth which is present in both atmospheric and low‐pressure metalorganic chemical vapor deposition.Keywords
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