MOVPE growth of SiO2-masked InP structures at reduced pressures
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3) , 334-339
- https://doi.org/10.1016/0022-0248(86)90320-9
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Low pressure MOVPE of InP from trimethylindium and phosphineJournal of Electronic Materials, 1986
- Selective-area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxyApplied Physics Letters, 1986
- Selective growth of InP buried structure by chloride vapor phase epitaxyApplied Physics Letters, 1986
- Selective epitaxial growth of GaAs by low-pressure MOVPEJournal of Crystal Growth, 1985
- Selective area LPE growth and open tube diffusion in InGaAs/InPJournal of Electronic Materials, 1985
- Selective area growth of gallium arsenide by metalorganic vapor phase epitaxyApplied Physics Letters, 1984
- Selective MOCVD growth of GaAlAs on partly masked substrates and its application to optoelectronic devicesJournal of Crystal Growth, 1984
- Selective metalorganic chemical vapour deposition for GaAs planar technologyJournal of Crystal Growth, 1984
- Indirect plasma deposition of silicon dioxideJournal of Vacuum Science and Technology, 1982
- Selective MOCVD epitaxy for optoelectronic devicesJournal of Crystal Growth, 1981