A comparison between zero and seven degrees of tilt implantation of As+, P+ and BF2+
- 1 August 1990
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 51 (2) , 122-124
- https://doi.org/10.1016/0168-583x(90)90511-r
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- BF 2 + Ion Implantation in Silicon: Effects of the In‐Flight DissociationJournal of the Electrochemical Society, 1988
- Planar channeling effects in a batch process ion implanterNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
- Channeling of ions near the silicon 〈001〉 axisApplied Physics Letters, 1985