Stress relaxation technique for thermally grown SiO2
- 21 July 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (3) , 143-145
- https://doi.org/10.1063/1.97205
Abstract
A corona discharge technique has been utilized at 800 °C to fully relax thermal oxides grown on Si wafers. In an experiment involving two oxidation steps, the corona-relaxed oxides are shown to be equivalent to ∼1200 °C thermally grown or thermally relaxed oxides, both with respect to index of refraction and oxygen diffusion coefficient. The activation energy for oxygen diffusion through a completely relaxed thermal oxide is found to be 0.8 eV.Keywords
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