1ƒ noise measurements in ion-implanted silicon resistors as a function of the substrate reverse bias voltage
- 31 December 1977
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (12) , 951-954
- https://doi.org/10.1016/0038-1101(77)90202-7
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Excess noise measurements in ion-implanted silicon resistorsSolid-State Electronics, 1974