Excess noise measurements in ion-implanted silicon resistors
- 30 June 1974
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (6) , 599-605
- https://doi.org/10.1016/0038-1101(74)90179-8
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Ion-implanted MOS technologyRadiation Effects, 1971
- Phenomenological approach to "current noise"British Journal of Applied Physics, 1955