Onsets of the Electron-Hole-Droplet Luminescence in Si
- 19 February 1979
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 42 (8) , 523-526
- https://doi.org/10.1103/physrevlett.42.523
Abstract
We report measurements of the laser excitation thresholds for the onset of electron-hole—droplet luminescence in Si in the temperature range 2.5-19.3 K. The results are consistent with finite-lifetime nucleation theory. Fits to the data determine a surface tension ≲1.1× erg/ and a sticking fraction ≲5%.
Keywords
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