Double Injection Currents in Long p-i-n Diodes with One Trapping Level
- 1 April 1970
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (5) , 2179-2184
- https://doi.org/10.1063/1.1659186
Abstract
An exact uniform theory is given for the I‐V characteristic of long p‐i‐n diodes with one trapping level. This theory does not assume a constant recombination lifetime or quasi‐neutrality, as did all previous treatments of this problem. As limiting cases, the theory gives the cube law at high injection levels, the square law for the semiconductor regime and the Ashley—Milnes regime. The theory is applied to the acceptor level of Au in Si for which case numerical solutions are given.This publication has 6 references indexed in Scilit:
- Gold as a recombination centre in siliconSolid-State Electronics, 1965
- Double Injection in Deep-Lying Impurity SemiconductorsJournal of Applied Physics, 1964
- Double Injection Diodes and Related DI Phenomena in SemiconductorsProceedings of the IRE, 1962
- Double Injection with Negative Resistance in Semi-InsulatorsPhysical Review Letters, 1962
- Double Injection in InsulatorsPhysical Review B, 1962
- Volume-Controlled, Two-Carrier Currents in Solids: The Injected Plasma CasePhysical Review B, 1961