Electron beam annealed Ge-WSi-Au and Ge-Ni-WSi-Au high temperature stable ohmic contacts on n-GaAs
- 1 February 1989
- journal article
- semiconductor devices
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 66 (2) , 213-225
- https://doi.org/10.1080/00207218908925378
Abstract
Detailed analysis of electron beam annealed Ge-WSi-Au and Ge-Ni-WSi-Au ohmic contacts is reported. Lower contact resistance values with better reproducibility and much lower standard deviation are achieved with Ni doped TLM devices. Ar+ ion X-ray photoelectron depth profiling was used to relate the distribution of Ge, Ni, W, Si, Au, Ga and O to the electrical properties of contacts. Ohmic behaviour was found probably to be dependent upon the Ge and Ni compound formation on the GaAs surface.Keywords
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