Chemical bonding states in the amorphous SixC1–x: H system studied by X-ray photoemission spectroscopy and infrared absorption spectra
- 1 February 1981
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 43 (2) , 283-294
- https://doi.org/10.1080/13642818108221899
Abstract
XPS studies and infrared absorption measurements of the reactively sputtered (RS) amorphous SixC1–x: H alloy system have been made. The binding energy of the Si 2p core electrons decreases monotonically as the alloy composition x increases while the corresponding line-width remains almost constant. On the other hand, a curve of the C 1s core electron binding energy versus x has a kink at around x = 0·5∼0·6. Infrared absorption spectra reveal the existence of C–H, Si–H, Si–C bonds in the films. These results are discussed in terms of chemical bonding states.Keywords
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