Photoelectron Spectra of Hydrogenated Amorphous Silicon
- 12 December 1977
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 39 (24) , 1576-1580
- https://doi.org/10.1103/physrevlett.39.1576
Abstract
Uv-induced and x-ray-induced photoelectron spectra have been taken on hydrogenated amorphous silicon prepared in situ by reactive sputtering. Hydrogen-induced features in the -Si valence-band region have been identified by comparison with spectra and calculations appropriate to the adsorption of hydrogen onto Si surfaces. Films sputtered at room temperature show peaks related to Si multiply bonded to hydrogen, while deposition at 300°C or above is mainly causing the formation of singly bonded SiH groups.
Keywords
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