Preparation of highly photoconductive amorphous silicon by rf sputtering
- 31 July 1977
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 23 (3) , 155-158
- https://doi.org/10.1016/0038-1098(77)90099-0
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputteringSolid State Communications, 1976
- Realistic tight-binding model for chemisorption: H on Si and Ge (111)Physical Review B, 1976
- Use of hydrogenation in the study of the transport properties of amorphous germaniumPhysical Review B, 1976
- Conductivity and thermoelectric power of amorphous germanium and amorphous siliconPhysical Review B, 1976
- Use of hydrogenation in structural and electronic studies of gap states in amorphous germaniumPhysical Review B, 1976
- Chemisorption of atomic hydrogen on the silicon (111) 7 × 7 surfacePhysical Review B, 1975
- Amorphous germanium I. A model for the structural and optical propertiesAdvances in Physics, 1973
- Structural, Optical, and Electrical Properties of Amorphous Silicon FilmsPhysical Review B, 1970