Si(111): Si—A Simple New Surface Phase
- 22 December 1975
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 35 (25) , 1728-1731
- https://doi.org/10.1103/physrevlett.35.1728
Abstract
Photoemission spectra show that atomic hydrogen reacts near room temperature with Si(111)1×1 to form a trihydride phase, Si(111): Si. The new phase, clearly to be distinguished from the monohydride Si(111): H obtained from Si(111)7×7, has been identified by theoretical calculation of the photoemission spectrum. Formation of Si(111): Si suggests that the vacancies that exist on clean Si(111)7×7 are disordered on Si(111)1×1.
Keywords
This publication has 10 references indexed in Scilit:
- Oxidation of Clean Ge and Si SurfacesPhysical Review Letters, 1975
- Self-Consistent Quantum Theory of Chemisorption: H on Si(111)Physical Review Letters, 1975
- Electron orbital energies of oxygen adsorbed on silicon surfaces and of silicon dioxidePhysical Review B, 1974
- Hydrogen adsorption and surface structures of siliconSurface Science, 1974
- Covalent Superlattice Structures at Silicon (111) SurfacesPhysical Review Letters, 1974
- Electronic transitions of oxygen adsorbed on clean silicon (111) and (100) surfacesPhysical Review B, 1974
- Excitonic instabilities, vacancies, and reconstruction of covalent surfacesSurface Science, 1973
- Energy-Level Spectra of Electrons at the (111), (110), and (100) Surfaces of Silicon and Germanium by Ion-Neutralization SpectroscopyPhysical Review B, 1973
- Structure and transformation characteristics of impurity stabilized phases on the Si(111) surfaceSurface Science, 1971
- Structural Properties of Cleaved Silicon and Germanium SurfacesJournal of Applied Physics, 1963