Oxidation of Clean Ge and Si Surfaces
- 5 May 1975
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 34 (18) , 1170-1173
- https://doi.org/10.1103/physrevlett.34.1170
Abstract
The low-energy-electron loss spectra of oxygen adsorbed at room temperature on clean Si and Ge (100) and (111) surfaces suggest that each oxygen atom is doubly bonded to a surface atom. Using a chemical-bonding argument, it is shown that this complex is also energetically more favorable than previously proposed oxidation models.Keywords
This publication has 22 references indexed in Scilit:
- Electron spectroscopy of GaAs and AlAs surfacesSurface Science, 1975
- Electron Energy-Loss Spectroscopy of GaAs and Ge SurfacesPhysical Review Letters, 1974
- Electron orbital energies of oxygen adsorbed on silicon surfaces and of silicon dioxidePhysical Review B, 1974
- Electronic transitions of oxygen adsorbed on clean silicon (111) and (100) surfacesPhysical Review B, 1974
- Temperature dependence of oxidation rate in clean Ge(111)Surface Science, 1973
- The adsorption of oxygen on silicon (111) surfaces. ISurface Science, 1973
- The adsorption of oxygen on a clean silicon surfaceSurface Science, 1973
- Calorimetric study of the adsorption of oxygen and gases HxA on germanium and siliconSurface Science, 1969
- Kinetics and mechanism of oxygen adsorption on single crystals of germaniumJournal of Physics and Chemistry of Solids, 1962
- The adsorption of oxygen on clean silicon surfacesJournal of Physics and Chemistry of Solids, 1960