Temperature dependence of oxidation rate in clean Ge(111)
- 30 November 1973
- journal article
- Published by Elsevier in Surface Science
- Vol. 40 (2) , 320-342
- https://doi.org/10.1016/0039-6028(73)90071-x
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- An investigation of silicon-oxygen interactions using Auger electron spectroscopySurface Science, 1971
- Interaction of H2 with (100)W. II. CondensationThe Journal of Chemical Physics, 1970
- The reaction of oxygen with silicon and germanium at elevated temperatures by weight loss measurementSurface Science, 1970
- Orientation-dependent sticking coefficient in the germanium-oxygen systemSurface Science, 1968
- Adsorption and Desorption of O2 on GaAs {111} SurfacesJournal of Applied Physics, 1967
- Measurement of oxygen adsorption on silicon by ellipsometryJournal of Physics and Chemistry of Solids, 1965
- Kinetics and mechanism of oxygen adsorption on single crystals of germaniumJournal of Physics and Chemistry of Solids, 1962
- Chemisorption on polycrystalline tungsten. Part 1.—Carbon monoxideTransactions of the Faraday Society, 1961
- Structure and Adsorption Characteristics of Clean Surfaces of Germanium and SiliconThe Journal of Chemical Physics, 1959
- Adsorption of Oxygen on SiliconThe Journal of Chemical Physics, 1959