Defects in lone-pair semiconductors: The valence-alternation model and new directions
- 1 January 1980
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 35-36, 807-817
- https://doi.org/10.1016/0022-3093(80)90300-2
Abstract
No abstract availableThis publication has 27 references indexed in Scilit:
- Time-Resolved Optical Absorption and Mobility of Localized Charge Carriers in -Physical Review Letters, 1979
- Calculation of Defect States in Amorphous SeleniumPhysical Review Letters, 1979
- Dispersive (non-Gaussian) transient transport in disordered solidsAdvances in Physics, 1978
- Valence-Alternation Model for Localized Gap States in Lone-Pair SemiconductorsPhysical Review Letters, 1976
- Luminescence in amorphous semiconductorsAdvances in Physics, 1976
- Optically Induced Localized Paramagnetic States in Amorphous SemiconductorsPhysical Review Letters, 1976
- States in the Gap in Glassy SemiconductorsPhysical Review Letters, 1975
- States in the gap and recombination in amorphous semiconductorsPhilosophical Magazine, 1975
- Model for the Electronic Structure of Amorphous SemiconductorsPhysical Review Letters, 1975
- g‐Value Calculations of Paramagnetic Centers in Amorphous SeleniumThe Journal of Chemical Physics, 1966