Ionized donor bound excitons in GaN
- 29 September 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (13) , 1837-1839
- https://doi.org/10.1063/1.119415
Abstract
The temperature and excitation power dependence of a bound exciton photoluminescence line S with a localization energy Q=11.5 meV has been studied in undoped and moderately Mg-doped wurtzite GaN of high resistivity. The data provide strong evidence that line S is due to recombination of excitons bound to ionized shallow donors. The consistency of this assignment with theoretical predictions is demonstrated.Keywords
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