Impurity conductivities in compensated semiconductor systems
- 15 July 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 48 (3) , 1921-1923
- https://doi.org/10.1103/physrevb.48.1921
Abstract
In light of recent measurements of the transport properties in compensated semiconductor systems, we report a calculation for the low-temperature dc electrical conductivity of the systems Si:P and Ge:Sb as a function of concentration and compensation. The effects of disorder are taken into account in the calculation. With increasing compensation the conductivity follows the trend of the experimental results. For uncompensated systems the results agree fairly well with experiments.Keywords
This publication has 27 references indexed in Scilit:
- Metal-insulator transition in the compensated semiconductor Si:(P,B)Physical Review B, 1992
- Critical behavior of the zero-temperature conductivity in compensated silicon, Si:(P,B)Physical Review B, 1988
- Intervalley mixing versus disorder in heavily doped-type siliconPhysical Review B, 1984
- The Impurity Conduction of n‐Type CdS: A Two Band ApproachPhysica Status Solidi (b), 1983
- Concentration-fluctuation model of a doped semiconductor in the nonmetallic regime: Pseudocluster investigationPhysical Review B, 1982
- Evidence for localization effects in compensated semiconductorsPhysical Review B, 1982
- Comparison of the specific heat and conductivity of Si: PPhysical Review B, 1981
- Possible Role of Incipient Anderson Localization in the Resistivities of Highly Disordered MetalsPhysical Review Letters, 1980
- Generalized Matsubara-Toyozawa theory for the specific heat in heavily-phosphorus-doped siliconPhysical Review B, 1979
- Scaling Theory of Localization: Absence of Quantum Diffusion in Two DimensionsPhysical Review Letters, 1979