Localized Excitons and Breaking of Chemical Bonds at III-V (110) Surfaces
- 24 July 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 75 (4) , 701-704
- https://doi.org/10.1103/physrevlett.75.701
Abstract
Electron-hole excitations in the surface bands of GaAs(110) are analyzed using constrained density-functional theory calculations. The results reveal formation of autolocalized Frenkel-type excitons which merge in microscopic “droplets” due to attraction initiated by exciton-induced unrelaxation of the surface. A substantial weakening of the bonding of the topmost Ga atom is found in such an “exciton droplet.” This finding suggests a microscopic mechanism of laser-induced emission of the neutral Ga atoms from GaAs and GaP (110) surfaces.Keywords
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