Inversion/accumulation-mode polysilicon thin-film transistors: characterization and unified modeling
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (9) , 1501-1509
- https://doi.org/10.1109/16.2583
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Laser-recrystallized polycrystalline-silicon thin-film transistors with low leakage current and high switching ratioIEEE Electron Device Letters, 1987
- Effects of H+implant dose and film deposition conditions on polycrystalline-Si MOSFET characteristicsIEEE Electron Device Letters, 1987
- A comprehensive analytic model of accumulation-mode MOSFET's in PolySilicon thin filmsIEEE Transactions on Electron Devices, 1986
- Polycrystalline-silicon device technology for large-area electronicsIEEE Transactions on Electron Devices, 1986
- Anomalous leakage current in LPCVD PolySilicon MOSFET'sIEEE Transactions on Electron Devices, 1985
- Hydrogen passivation of PolySilicon MOSFET's from a plasma Nitride sourceIEEE Electron Device Letters, 1984
- Theory of conduction in polysilicon: Drift-diffusion approach in crystalline-amorphous-crystalline semiconductor system—Part I: Small signal theoryIEEE Transactions on Electron Devices, 1984
- Enhanced conductivity in plasma-hydrogenated polysilicon filmsApplied Physics Letters, 1980
- Thin film MOSFET’s fabricated in laser-annealed polycrystalline siliconApplied Physics Letters, 1979
- The electrical properties of polycrystalline silicon filmsJournal of Applied Physics, 1975