Positron Annihilation Spectroscopy of As Vacancies in As-Grown GaAs
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Positron Studies of Defects in III–V Semiconductor CompoundsPhysica Status Solidi (a), 1987
- Theoretical Aspects of Positrons in Imperfect SolidsPhysica Status Solidi (a), 1987
- Electronic structure and positron states at vacancies in Si and GaAsPhysical Review B, 1986
- Vacancy interactions in GaAsJournal of Applied Physics, 1986
- Irradiation-induced defects in GaAsJournal of Physics C: Solid State Physics, 1985