Controlled growth of arsenic trisulphide films for coupling integrated optical devices
- 14 February 1981
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 14 (2) , 323-331
- https://doi.org/10.1088/0022-3727/14/2/023
Abstract
The optical properties of evaporated films of arsenic trisulphide are examined in some detail and compared with bulk properties. It is proposed to use the films as a means of interconnecting integrated optical devices in high and low index materials and also for the coupling of sandwich ribbon fibres to optical waveguides in lithium niobate. To be effective, the films must be formed with a high degree of precision and control of film thickness and index to better than 0.01 mu m and 0.01, respectively, is obtained. Stability of the films under illumination is also discussed.Keywords
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