An application of the statistical shift model to the inverted Meyer-Neldel, MN, relationship in heavily-doped microcrystalline Si, μc-Si
- 1 December 1993
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 164-166, 973-976
- https://doi.org/10.1016/0022-3093(93)91160-5
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Electronic Transport in Hydrogenated Amorphous SemiconductorsPublished by Springer Nature ,1989
- Electronic transport in hydrogenated amorphous siliconPhilosophical Magazine Part B, 1983
- The Hall effect in polycrystalline and powdered semiconductorsReports on Progress in Physics, 1980