2×n surface structure of SiGe layers deposited on Si(100)
- 14 September 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (11) , 1307-1309
- https://doi.org/10.1063/1.107574
Abstract
The surface structure of SiGe layers deposited on Si(100) has been studied by surface analysis techniques. The 2×1 surface reconstruction is changed into a 2×n (n≳8) structure observed in low energy electron diffraction. Scanning tunneling microscopy pictures reveal that after (n−1) subsequent dimers one dimer is missing. The density of missing dimers depends on the Ge content and on the layer thickness. Auger electron spectra show a strong Ge segregation. The evaluation of the intensities of low energy electron diffraction can explain the structure by a small expansion of the topmost SiGe layer enriched by Ge.Keywords
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