X-ray photoelectron spectroscopic study of rapid thermal processing on SiO2/GaAs
- 19 June 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (25) , 2559-2561
- https://doi.org/10.1063/1.101544
Abstract
Effects of rapid thermal processing (RTP) on 200‐nm‐thick SiO2/GaAs interfaces have been studied with x‐ray photoelectron spectroscopy. RTP has been performed at 910 °C for 9 s with the heating rate of 53 °C/s. Rapid diffusion of Ga through SiO2 occurs. The diffusion coefficient of Ga in SiO2 for RTP is found to be about two orders of magnitude larger than that for conventional furnace processing. The heating rate dependence of the Ga outdiffusion is also reported in the range 31–83 °C/s. In addition, slight loss of As is observed. These results are discussed on the basis of the RTP‐induced thermal stress between SiO2 and GaAs.Keywords
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