Study of electron traps in n-GaAs resulting from infrared rapid thermal annealing

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Abstract
Electron traps in n‐GaAs resulting from infrared rapid thermal annealing (IRTA) have been studied by deep‐level transient spectroscopy (DLTS). An electron trap with an activation energy of 0.20 eV from the conduction band, termed EN1, is introduced by IRTA above 800 °C. This trap formation is closely related to a rapid heating stage in an IRTA process. The EN1 concentration changes similarly to the concentration of the dominant midgap electron trap EL2 versus the variation of annealing temperature, annealing time, or encapsulating films. It is proposed that the IRTA‐related EN1 trap is ascribed to defect complexes, including AsGa antisite defects, such as VAsAsGa.