Infrared rapid thermal annealing of Si-implanted GaAs
- 15 October 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (8) , 755-758
- https://doi.org/10.1063/1.93667
Abstract
Conditions for post-implantation capless annealing of GaAs, called infrared rapid thermal annealing (IRTA) using halogen lamps, were investigated. Si-implanted GaAs (5×1012 cm−2, 150 keV) was annealed at temperatures ranging from 700 to 1100 °C for various annealing times. Annealed GaAs at 950 °C for 2–4 s shows about 75% electrical activation and 3700 cm2/Vs electron mobility without noticeable dopant diffusion and surface decomposition. Planar metal-semiconductor field-effect transistors (MESFET’s) fabricated on the active layer formed by this annealing method show that the technique is promising as a post-implantation annealing method for the fabrication of GaAs MESFET’s and GaAs integrated circuits (IC’s).Keywords
This publication has 3 references indexed in Scilit:
- Radiation Annealing of GaAs Implanted with SiJapanese Journal of Applied Physics, 1981
- Radiation Annealing of Boron-Implanted Silicon with a Halogen LampJapanese Journal of Applied Physics, 1980
- LSI processing technology for planar GaAs integrated circuitsIEEE Transactions on Electron Devices, 1980