Radiation Annealing of Si- and S-Implanted GaAs
- 1 May 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (5A) , L299-300
- https://doi.org/10.1143/jjap.22.l299
Abstract
Radiation annealing of Si- and S-implanted GaAs using tungsten lamps was studied. In capless radiation annealing, electrical activations were 70–80%, which were 20–30% higher than that in conventional furnace annealing for a low dose below 2×1013 cm-2. Effects of encapsulation on electrical activation were also investigated. It was found that electrical activations of high dose samples were improved by encapsulating the surface with SiO2 film for Si-implanted samples and with Si3N4 film for S-implanted samples.Keywords
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