Optimization of the growth by MOVPE of strained GaSb/InAs double heterojunctions and superlattices on [111] GaAs substrates
- 1 November 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 124 (1-4) , 395-400
- https://doi.org/10.1016/0022-0248(92)90490-a
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Magnetotransport of piezoelectric [111] oriented strained quantum wellsApplied Physics Letters, 1991
- GaSb/InAs heterojunctions grown by MOVPE: Effect of gas switching sequences on interface qualityJournal of Crystal Growth, 1991
- Absorption characteristics of GaSb/InAs and InSb/InAs SLSs grown on (111) GaAs by MOVPEJournal of Crystal Growth, 1991
- GaSb/InAs heterojunctions grown by MOVPEJournal of Crystal Growth, 1991
- Strain-induced two-dimensional electron gas in [111] growth-axis strained-layer structuresApplied Physics Letters, 1990
- Direct demonstration of a misfit strain-generated electric field in a [111] growth axis zinc-blende heterostructureApplied Physics Letters, 1990
- Theory of semiconductor superlattice electronic structureReviews of Modern Physics, 1990
- GaAs/GaSb strained-layer heterostructures deposited by metalorganic vapor phase epitaxyApplied Physics Letters, 1989
- Optical Properties of (100) - and (111)-Oriented GaInAs/GaAs Strained-Layer SuperlatticesPhysical Review Letters, 1989
- GaSb heterostructures grown by MOVPEJournal of Crystal Growth, 1988