Thermally oxidized GaN film for use as gate insulators
- 1 March 2001
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 19 (2) , 579-581
- https://doi.org/10.1116/1.1349733
Abstract
The structural and electrical characteristics of a thermally grown gallium oxide on GaN films were investigated. A furnace oxidation at 850 °C for 12 h resulted in the formation of monoclinic β-Ga2O3, 88 nm in thickness. From the I–V measurements of the metal–oxide–semiconductor (MOS) structure, the breakdown field strength (EBD) was found to be 3.85±0.32 MV cm−1. Under gate voltage sweep, C–V hysteresis was observed due to the oxide charge trap. By comparing the ideal and experimental C–V curves, the oxide charge density (Nf) was calculated to be 6.77×1011 cm−2. These results suggest that the thermally grown Ga2O3 is suitable for gate dielectric applications of power MOS field-effect transistors.Keywords
This publication has 11 references indexed in Scilit:
- Studies of metal–ferroelectric–GaN structuresApplied Physics Letters, 1999
- Wet thermal oxidation of GaNJournal of Electronic Materials, 1999
- Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistorsApplied Physics Letters, 1998
- Investigations of SiO2/n-GaN and Si3N4/n-GaN insulator–semiconductor interfaces with low interface state densityApplied Physics Letters, 1998
- High-power 10-GHz operation of AlGaN HFET's on insulating SiCIEEE Electron Device Letters, 1998
- Kinetic Study of the Oxidation of Gallium Nitride in Dry AirJournal of the Electrochemical Society, 1998
- High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistorIEEE Electron Device Letters, 1998
- Low interface trap density for remote plasma deposited SiO2 on n-type GaNApplied Physics Letters, 1996
- Unified defect model and beyondJournal of Vacuum Science and Technology, 1980
- GaAs Oxidation and the Ga‐As‐O Equilibrium Phase DiagramJournal of the Electrochemical Society, 1980