High-power 10-GHz operation of AlGaN HFET's on insulating SiC
- 1 June 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 19 (6) , 198-200
- https://doi.org/10.1109/55.678543
Abstract
We report the first high-power RF characterization of AlGaN HFET's fabricated on electrically insulating SiC substrates. A record total power of 2.3 W at 10 GHz was measured from a 1280-μm wide HFET at V/sub ds/=33 V. An excellent RF power density of 2.8 W/mm was measured on a 320-μm wide HFET. These values are a result of the high thermal conductivity of SiC, relative to the typical substrate, sapphire.Keywords
This publication has 14 references indexed in Scilit:
- Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistorsApplied Physics Letters, 1997
- High-temperature performance of AlGaN/GaN HFETs on SiC substratesIEEE Electron Device Letters, 1997
- Short-channel Al 0.5 Ga 0.5 N/GaNMODFETs withpower density > 3 W/mm at 18 GHzElectronics Letters, 1997
- Study of contact formation in AlGaN/GaN heterostructuresApplied Physics Letters, 1997
- Piezoelectric charge densities in AlGaN/GaN HFETsElectronics Letters, 1997
- AlGaN-GaN heterostructure FETs with offset gatedesignElectronics Letters, 1997
- Dependence of DC and RF characteristics on gatelength for high currentAlGaN/GaN HFETsElectronics Letters, 1997
- GaN/AlGaN MODFET with 80 GHz
f
max
and >100 V gate-drain breakdown voltageElectronics Letters, 1997
- CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHzIEEE Electron Device Letters, 1996
- Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistorsIEEE Electron Device Letters, 1996