GaN/AlGaN MODFET with 80 GHz f max and >100 V gate-drain breakdown voltage
- 13 February 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (4) , 334-335
- https://doi.org/10.1049/el:19970174
Abstract
The authors report on the characteristics of 0.25 µm gate-length GaN/AlGaN modulation doped field effect transistors grown by MOCVD on sapphire. A record combination of high breakdown voltage (>100 V) and high frequency performance (fT = 27 GHz, fmax = 80 GHz) was achieved, which demonstrates the excellent potential of these devices for microwave power applications.Keywords
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